Challenges in graphene integration for high-frequency and flexible electronics
Filippo GIANNAZZO (CNR-IMM)
Due to its outstanding electronic and mechanical properties combined with the atomic scale thickness, graphene (Gr) holds great promises for applications in the fields of ultra-high-frequency and flexible electronics. Following the huge progresses obtained in the last decade in Gr synthesis, high quality Gr membranes on large area are nowadays available for devices fabrication. One of the main challenges to bring Gr from laboratory to real applications is currently represented by its integration with state-of –the-art semiconductor technology.
This presentation will illustrate the research activity in progress at CNR-IMM, in close collaboration with STMicroelectronics, aimed at Gr integration with wide bandgap semiconductors (WBS), such as SiC and III-Nitrides, for high-frequency and energy efficient electronics, and with plastics substrates for flexible devices.
Recent investigations on the structural and electrical properties of Gr heterostructures with SiC and GaN will be reviewed [[1],[2]], and current understanding on the mechanisms of vertical current transport at these heterointerfaces will be discussed [[3],[4]]. The design, implementation and expected performances of novel vertical device concepts based on Gr/WBS heterostructures will be discussed, in particular the Gr/SiC Schottky diode with field-effect modulation of the barrier height for logic applications with low power dissipation, and the Gr-base hot electron transistor on GaN for ultra-high frequency (THz) electronics.
Furthermore some of the challenges for the development of a Gr-based integrated system (including sensors, interconnects, electronics, transmission system,..) on plastics substrates will be discussed. Examples of back-gated Gr field effect transistors on large area PEN foils designed to be used as pH sensors with integrated micro-fluidic will be presented.
References
[[1]] G. Nicotra, I. Deretzis, M. Scuderi, C. Spinella, P. Longo, R. Yakimova, F. Giannazzo, A. La Magna, Phys. Rev. B 91 (2015) 155411.
[[2]] G. Nicotra, Q. M. Ramasse, I. Deretzis, A. La Magna, C. Spinella, F. Giannazzo, ACS Nano, 7 (2013) 3045.
[[3]] G. Nicotra, I. Deretzis, M. Scuderi, C. Spinella, P. Longo, R. Yakimova, F. Giannazzo, A. La Magna, Phys. Rev. B 91 (2015) 155411.
[[4]] G. Nicotra, Q. M. Ramasse, I. Deretzis, A. La Magna, C. Spinella, F. Giannazzo, ACS Nano, 7 (2013) 3045.
